2SC5480 transistor equivalent, silicon npn power transistor.
*Designed for horizontal deflection output stage
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
.
*High Breakdown Voltage-
: VCBO= 1500V (Min)
*High Switching Speed
*Built-in Damper Diode
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for h.
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